Hg1 Os1

semiconductor

· Hg1 Os1

HgOs (mercury-osmium intermetallic compound) is an experimental semiconductor material belonging to the class of binary intermetallic compounds. This material represents research into heavy-element semiconductors that may exhibit unique electronic and structural properties due to the combination of mercury's low melting point behavior and osmium's high density and refractory characteristics. Such compounds are primarily of scientific interest for exploring novel band structures and potential applications in extreme environment electronics or specialized optoelectronic devices, though industrial deployment remains limited.

research semiconductorsintermetallic compoundshigh-density electronicsextreme temperature applicationsmaterials physics researchexperimental optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	196.5	GPa	—
Shear Modulus(G)	61.39	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00480	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.9840	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hg1 Os1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control