Hg0.2Zn0.8Te

semiconductor

· Hg0.2Zn0.8Te

Hg0.2Zn0.8Te is a mercury-zinc telluride alloy belonging to the II-VI semiconductor family, engineered to achieve specific bandgap and lattice properties intermediate between mercury telluride and zinc telluride endpoints. This material is primarily investigated for infrared detection and optoelectronic applications, particularly in thermal imaging sensors and long-wavelength infrared photodetectors where its tunable bandgap allows operation in the mid-to-long-wavelength infrared spectrum; it represents an advanced alternative to conventional materials like mercury cadmium telluride (HgCdTe) in niche applications where the zinc substitution offers improved lattice matching or reduced toxicity concerns.

infrared photodetectorsthermal imaging sensorslong-wavelength IR applicationsresearch optoelectronicsspace-based remote sensinghigh-purity semiconductor development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.400	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hg0.2Zn0.8Te

Electrical Properties

Regulatory Screening

Environmental

Export Control