Hg0.14Zn0.86Te

semiconductor

· Hg0.14Zn0.86Te

Hg₀.₁₄Zn₀.₈₆Te is a mercury-zinc telluride alloy belonging to the II-VI semiconductor family, engineered to bridge the bandgap between pure ZnTe and HgTe for infrared applications. This material is primarily used in infrared detector arrays and thermal imaging systems operating in the mid- to long-wave infrared spectrum, where its narrow bandgap enables room-temperature or minimal-cooling operation compared to alternatives like InSb or MCT detectors. The composition is optimized for specific infrared wavelength windows critical to military surveillance, industrial thermography, and scientific spectroscopy.

infrared detectorsthermal imaging systemsmid-wave infrared (MWIR) sensorslong-wave infrared (LWIR) applicationsmilitary surveillance opticsscientific spectroscopy

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.730	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hg0.14Zn0.86Te

Electrical Properties

Regulatory Screening

Environmental

Export Control