Hg0.01Zn0.99Te

semiconductor

· Hg0.01Zn0.99Te

Hg₀.₀₁Zn₀.₉₉Te is a mercury-doped zinc telluride semiconductor, a narrow-bandgap II-VI compound with mercury as a minority dopant in the zinc telluride host lattice. This material is primarily of research and specialized detector interest, used in infrared sensing applications where its bandgap engineering enables detection in the mid- to long-wave infrared region (MWIR/LWIR); it competes with other narrow-gap semiconductors like mercury cadmium telluride (HgCdTe) but with different thermal and compositional trade-offs relevant to cryogenic thermal imaging and space-based sensor systems.

infrared detectorsthermal imaging sensorsspace-based instrumentationcryogenic applicationsnarrow-bandgap researchbandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.300	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hg0.01Zn0.99Te

Electrical Properties

Regulatory Screening

Environmental

Export Control