Hg0.01Zn0.99Te
semiconductor· Hg0.01Zn0.99Te
Hg₀.₀₁Zn₀.₉₉Te is a mercury-doped zinc telluride semiconductor, a narrow-bandgap II-VI compound with mercury as a minority dopant in the zinc telluride host lattice. This material is primarily of research and specialized detector interest, used in infrared sensing applications where its bandgap engineering enables detection in the mid- to long-wave infrared region (MWIR/LWIR); it competes with other narrow-gap semiconductors like mercury cadmium telluride (HgCdTe) but with different thermal and compositional trade-offs relevant to cryogenic thermal imaging and space-based sensor systems.
infrared detectorsthermal imaging sensorsspace-based instrumentationcryogenic applicationsnarrow-bandgap researchbandgap engineering
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
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