HfTaO3 is a mixed-metal oxide ceramic compound combining hafnium, tantalum, and oxygen, belonging to the family of refractory oxides and high-dielectric ceramics. This material is primarily of research and developmental interest for advanced dielectric and insulator applications where extreme thermal stability and high-frequency performance are required. It is notable in the context of next-generation gate dielectrics, microelectronics integration, and high-temperature ceramic coatings, where the combined properties of hafnia and tantalum oxide offer potential advantages over single-component alternatives in suppressing leakage currents and maintaining performance at elevated temperatures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB)2 entries | 0.3180 | μB | — | ||
| ↳ | 0.000960 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -1.910 | eV/atom | — | ||
| ↳ | 0.6400 | eV/atom | — |