HfSnON2

semiconductor

· HfSnON2

HfSnON₂ is an experimental oxynitride semiconductor compound combining hafnium, tin, oxygen, and nitrogen phases. This material belongs to the emerging class of high-κ dielectric and wide-bandgap semiconductors being investigated for next-generation microelectronic and photonic devices. Research into hafnium-tin oxynitrides targets advanced gate dielectrics, power electronics, and optoelectronic applications where conventional oxides reach physical or thermal limits, though commercial adoption remains limited and the material is primarily found in academic and specialized industrial R&D contexts.

advanced gate dielectricswide-bandgap power semiconductorshigh-temperature electronicsresearch-phase optoelectronicsnext-generation microprocessors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.700	eV	—
Magnetic Moment(μB)	2.812e-7	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.040	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HfSnON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control