HfMgO2S — Properties & Data | MatWorld

HfMgO2S

semiconductor

· HfMgO2S

HfMgO2S is an experimental ternary semiconductor compound combining hafnium, magnesium, oxygen, and sulfur elements. This mixed-anion ceramic is primarily a research material under investigation for optoelectronic and photocatalytic applications, where its wide bandgap and mixed ionic-covalent bonding make it a candidate for UV-responsive devices and photocatalytic water splitting. Engineers considering this material should recognize it remains largely in the academic development phase; it offers potential advantages over single-oxide or single-sulfide alternatives in bandgap engineering and charge separation, but lacks the material maturity and standardized processing of conventional wide-gap semiconductors like GaN or SiC.

photocatalytic water splittingUV photodetectorsoptical coatings researchphotovoltaic developmentemerging semiconductor researchenvironmental remediation (dye degradation)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	0.00000731	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.260	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HfMgO2S

Electrical Properties

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Regulatory Screening

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