HfLaO2N

ceramic

· HfLaO2N

HfLaO₂N is an oxynitride ceramic compound combining hafnium, lanthanum, oxygen, and nitrogen phases, belonging to the family of high-k dielectric and refractory materials. This is primarily a research material investigated for advanced microelectronic gate dielectrics and high-temperature structural applications, where its mixed ionic-covalent bonding and potential for tunable electronic properties offer advantages over conventional oxides in demanding thermal and electrical environments.

advanced gate dielectricshigh-k semiconductor devicesresearch and developmenthigh-temperature ceramicsnext-generation CMOS technology

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	-0.2802	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.260	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HfLaO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental