HfGeSe is a ternary ceramic compound combining hafnium, germanium, and selenium, belonging to the class of chalcogenide ceramics. This material is primarily investigated in materials research for semiconducting and thermoelectric applications, where the combination of these elements offers tunable band gap and phonon-scattering properties. Engineers consider HfGeSe when designing high-temperature thermoelectric devices, radiation-resistant components, or next-generation semiconductors where the unique electronic structure of multi-element chalcogenides provides advantages in efficiency or thermal stability compared to binary compounds.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 111.8 | GPa | — | ||
| ↳ | 112.6 | GPa | — | ||
Poisson's Ratio(ν) | 0.2400 | - | — | ||
Shear Modulus(G)2 entries | 73.86 | GPa | — | ||
| ↳ | 73.31 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 9.594 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -9.587 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.9589 | eV/atom | — |