HfGeON2

semiconductor

· HfGeON2

HfGeON₂ is an experimental ternary nitride semiconductor compound combining hafnium, germanium, and nitrogen, representing a research-stage material in the wide-bandgap and high-κ dielectric family. This material is primarily under investigation for advanced microelectronic and optoelectronic applications where its potential for high thermal stability, wide bandgap characteristics, and integration with existing semiconductor processes could offer advantages over conventional SiO₂ or single-component nitrides; however, it remains largely confined to laboratory research and has not achieved widespread industrial adoption.

Gate dielectrics (advanced CMOS)High-temperature semiconductor devicesWide-bandgap electronics researchOptoelectronic componentsEmerging memory technologiesRadiation-hardened electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.600	eV	—
Magnetic Moment(μB)	2.253e-7	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.8200	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HfGeON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control