HfEuO3 — Properties & Data | MatWorld

HfEuO3

semiconductor

· HfEuO3

HfEuO3 is a rare-earth hafnium oxide ceramic compound combining hafnium and europium oxides, belonging to the family of perovskite or perovskite-derived oxides used in advanced electronic and photonic applications. This material is primarily investigated in research settings for its potential in high-k dielectric applications, luminescent devices, and radiation-hard electronics, leveraging hafnium's excellent dielectric properties and europium's strong photoluminescent characteristics. HfEuO3 represents an emerging material for next-generation microelectronics and optoelectronic systems where conventional oxides reach performance limits, particularly in environments requiring combined dielectric strength and optical functionality.

high-k gate dielectricsluminescent devicesradiation-resistant electronicsthin-film capacitorsphotonic integrated circuitsresearch phase materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.359	eV	DFT · PBE
Magnetic Moment(μB)	0.000	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-3.497	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HfEuO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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