HfCdO3 is a ternary oxide semiconductor compound combining hafnium, cadmium, and oxygen, representing an emerging material in the oxide semiconductor family. While primarily a research compound rather than an established commercial material, it is being investigated for next-generation optoelectronic and thin-film transistor applications where hafnium oxides are valued for high dielectric strength and cadmium oxides offer tunable bandgap properties. Its development is driven by the semiconductor industry's need for alternative channel materials and dielectric layers that can advance beyond conventional silicon-based architectures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 8.239 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 2.471 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
| ↳ | 0.8545 range 0.000–1.709median of 2 measurements | eV | — | ||
Magnetic Moment(μB)3 entries | 0.000 | μB | — | ||
| ↳ | 0.3022 | μB | — | ||
| ↳ | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -2.290 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.3017 | eV/atom | — | ||
Formation Energy(ΔHf)3 entries | -2.549 | eV/atom | — | ||
| ↳ | 1.300 | eV/atom | — | ||
| ↳ | -2.453 | eV/atom | — |