HfCdO3 — Properties & Data | MatWorld

HfCdO3

semiconductor

· HfCdO3

HfCdO3 is a ternary oxide semiconductor compound combining hafnium, cadmium, and oxygen, representing an emerging material in the oxide semiconductor family. While primarily a research compound rather than an established commercial material, it is being investigated for next-generation optoelectronic and thin-film transistor applications where hafnium oxides are valued for high dielectric strength and cadmium oxides offer tunable bandgap properties. Its development is driven by the semiconductor industry's need for alternative channel materials and dielectric layers that can advance beyond conventional silicon-based architectures.

experimental semiconductor researchthin-film transistorsoptoelectronic deviceshigh-k dielectric layersnext-generation semiconductorsmaterial discovery and development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	8.239	kg/m³	DFT · OptB88vdW

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)4 entries	0.000	eV	DFT · OptB88vdW
↳	1.709	eV	DFT · TBmBJ
↳	2.471	eV	DFT · PBE
↳	0.000	eV	DFT · GLLB-SC
High-Frequency Dielectric Constant (ε∞)(ε∞)	3.463	-	DFT · TBmBJ
Magnetic Moment(μB)3 entries	0.000	μB	DFT
↳	0.3022	μB	DFT
↳	0.000	µB	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00000107	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.000186	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-2.290	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	30.18	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	29.05	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Method

Property	Value	Unit	Conditions
Energy Above Hull(ΔEhull)	0.3017	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)3 entries	-2.549	eV/atom	DFT
↳	1.300	eV/atom	DFT
↳	-2.453	eV/atom	DFT · OptB88vdW

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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HfCdO3

Physical Properties

Electrical Properties

Other Properties

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