HfBaO3 — Properties & Data | MatWorld

HfBaO3

semiconductor

· HfBaO3

HfBaO3 is a ternary oxide ceramic compound combining hafnium, barium, and oxygen, belonging to the perovskite or related oxide ceramic family. This material is primarily of research and developmental interest for high-temperature electronics, dielectric applications, and advanced gate dielectrics in next-generation semiconductor devices, where its high dielectric constant and thermal stability offer potential advantages over conventional oxide layers in extreme temperature or high-field environments.

high-temperature electronicsadvanced gate dielectricsdielectric layerssemiconductor researchthermal barrier applicationsRF/microwave devices

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?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

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Method

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	3.156	eV	DFT · PBE
↳	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)2 entries	0.000	μB	DFT
↳	0.6361	μB	DFT

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)2 entries	-3.268	eV/atom	DFT
↳	1.580	eV/atom	DFT

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HfBaO3

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