HfAuO2N is an experimental ceramic compound combining hafnium, gold, oxygen, and nitrogen—a quaternary nitride-oxide system that remains primarily in research phase. This material family is of interest for high-temperature applications and advanced electronic devices where the unique combination of refractory hafnium, noble-metal gold, and nitrogen doping could offer enhanced thermal stability, oxidation resistance, or modified electronic properties. Practical industrial deployment is limited; applications are mainly exploratory in academic settings focused on next-generation barrier coatings, high-k dielectric systems, or catalytic substrates.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | -0.00151 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 2.460 | eV/atom | — |