HfAsO₂N is an advanced ceramic compound combining hafnium, arsenic, oxygen, and nitrogen—a complex oxynitride material that represents emerging research in high-performance ceramic science. This material belongs to the family of transition metal oxynitrides, which are investigated for applications requiring exceptional thermal stability, oxidation resistance, and potentially enhanced mechanical or electrical properties at extreme conditions. While not yet established in mainstream industrial production, hafnium-based oxynitrides are of particular interest in aerospace and high-temperature electronics contexts where conventional ceramics reach their limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.6154 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.320 | eV/atom | — |