HfAlO2N

semiconductor
· HfAlO2N

HfAlO₂N is an oxynitride ceramic compound combining hafnium, aluminum, oxygen, and nitrogen, belonging to the family of advanced refractory oxides and nitrides. This material is primarily investigated in research contexts for semiconductor and dielectric applications, particularly as a high-κ gate dielectric or barrier layer in advanced microelectronic devices where traditional SiO₂ becomes too leaky at nanoscale dimensions. Its appeal lies in combining hafnium oxide's high dielectric constant with aluminum oxide's thermal stability and nitrogen's ability to improve interfacial properties and suppress oxygen diffusion, making it relevant for next-generation CMOS technology nodes and emerging high-temperature semiconductor applications.

advanced CMOS gate dielectricshigh-κ semiconductor filmsmicroelectronic device barriersresearch-phase materialsthin-film deposition targets

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
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eV——
Magnetic Moment(μB)
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μB——
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
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eV/atom——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.