Hf4S4O4 is an oxysulfide semiconductor compound combining hafnium, sulfur, and oxygen in a mixed-anion system. This material belongs to the family of transition metal chalcogenides and oxychalcogenides, which are primarily investigated in research contexts for their tunable electronic and optical properties that differ from conventional single-anion semiconductors. Engineers and materials researchers explore such compounds for next-generation optoelectronic and photocatalytic applications where the dual anionic framework can offer advantageous band structure characteristics and chemical stability compared to traditional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 148.5 | GPa | — | ||
Shear Modulus(G) | 61.84 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.870 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.771 | eV/atom | — |