Hf4 N4 O2

semiconductor

· Hf4 N4 O2

Hf₄N₄O₂ is an oxynitride ceramic compound in the hafnium-nitrogen-oxygen system, combining hafnium metal with nitrogen and oxygen in a mixed-anion structure. This material is primarily of research and development interest for high-temperature structural applications, leveraging hafnium's exceptional refractory properties and chemical stability; it remains largely experimental but represents the broader class of oxynitride ceramics being investigated for extreme-environment aerospace and nuclear systems where conventional oxides or nitrides alone show limitations.

high-temperature structural ceramicsaerospace thermal protectionnuclear reactor componentsrefractory coatingsresearch and developmentextreme-environment engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.369	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.363	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hf4 N4 O2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control