Hf2 Ge2 Te8

semiconductor

· Hf2 Ge2 Te8

Hf₂Ge₂Te₈ is a layered semiconductor compound combining hafnium, germanium, and tellurium in a 2:2:8 stoichiometry. This material belongs to the family of transition metal chalcogenides and is primarily of research interest for its potential in thermoelectric and optoelectronic applications, where the layered structure and mixed-metal composition offer tunable band gaps and thermal transport properties.

thermoelectric devicesinfrared photodetectorssemiconducting thin filmssolid-state electronics researchlow-dimensional materialsemerging photovoltaics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.02360	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.4600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hf2 Ge2 Te8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control