Hf2 Ge2 S2

semiconductor

· Hf2 Ge2 S2

Hf₂Ge₂S₂ is a layered semiconductor compound combining hafnium, germanium, and sulfur, belonging to the family of transition metal chalcogenides with potential for two-dimensional material applications. This is primarily a research-stage material being investigated for optoelectronic and thermoelectric device development, where its layered crystal structure and semiconductor properties could enable integration into next-generation electronics, particularly in flexible or ultrathin device architectures where traditional bulk semiconductors are impractical.

research semiconductorsoptoelectronic devicesthermoelectric materialstwo-dimensional materialsflexible electronicsenergy conversion applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	127.1	GPa	—
Shear Modulus(G)	81.58	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00460	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.132	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hf2 Ge2 S2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control