Hf18 Mo8 As2
semiconductorHf₁₈Mo₈As₂ is an intermetallic compound combining hafnium, molybdenum, and arsenic in a specific stoichiometric ratio, belonging to the family of refractory metal arsenides and intermetallics. This composition represents a research-phase material studied for its potential in high-temperature structural applications and semiconductor device development, where the combination of refractory metals (hafnium and molybdenum) with arsenic offers potential for thermal stability and electronic properties not available in conventional alloys. Materials in this chemical family are primarily of academic and exploratory industrial interest rather than established production materials, making this a candidate for advanced research contexts rather than mainstream engineering applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |