Hf1 Zr1 O4

semiconductor

· Hf1 Zr1 O4

Hf₁Zr₁O₄ is a mixed-metal oxide ceramic compound combining hafnium and zirconium oxides in a 1:1 ratio, belonging to the family of refractory oxide semiconductors. This material is primarily investigated in research contexts for high-temperature applications and advanced dielectric systems, where the dual-metal composition offers potential advantages in thermal stability and material property tuning compared to single-component oxides. Its use remains largely experimental, with development focused on applications requiring materials that can withstand extreme conditions while maintaining electrical or thermal functionality.

high-temperature dielectricsgate dielectrics (advanced CMOS)refractory coatingsthermal barrier systemssemiconductor processing materialsresearch/development phase

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	216.2	GPa	—
Shear Modulus(G)	113.9	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.636	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-3.704	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hf1 Zr1 O4

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control