Hf1 Zn1 O3

semiconductor

· Hf1 Zn1 O3

HfZnO₃ is an experimental mixed-metal oxide semiconductor combining hafnium and zinc in a perovskite-related crystal structure. This compound belongs to the family of wide-bandgap semiconductors and is primarily studied in research contexts for potential optoelectronic and electronic device applications, where the combination of high-κ dielectric properties (from hafnium oxide) and wide bandgap characteristics could enable high-temperature operation, enhanced radiation hardness, or improved device isolation compared to conventional single-oxide semiconductors.

next-generation semiconductor deviceshigh-temperature electronicsradiation-hard applicationsdielectric thin filmsoptoelectronic researchintegrated circuit gate dielectrics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.08580	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.213	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hf1 Zn1 O3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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