Hf1 Te2

semiconductor

· Hf1 Te2

HfTe₂ is a layered transition metal dichalcogenide semiconductor compound composed of hafnium and tellurium. This material belongs to the family of two-dimensional (2D) semiconductors and is primarily of research and development interest for next-generation electronic and optoelectronic applications. HfTe₂ is investigated for potential use in field-effect transistors, photodetectors, and thermoelectric devices, where its layered crystal structure and tunable electronic properties offer advantages over conventional bulk semiconductors in miniaturized or flexible device architectures.

thermoelectric devicesfield-effect transistorsphotodetectors2D electronics researchquantum materialsflexible electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	28.53	GPa	—
Shear Modulus(G)	21.20	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00580	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.8430	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hf1 Te2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control