Hf1 Se2

semiconductor

· Hf1 Se2

HfSe₂ is a layered transition metal dichalcogenide (TMD) semiconductor composed of hafnium and selenium, part of an emerging class of two-dimensional materials. While primarily in research and development phases, HfSe₂ is investigated for next-generation electronics, optoelectronics, and quantum devices due to its tunable bandgap and strong light-matter interactions—offering potential advantages over traditional silicon in niche applications requiring high carrier mobility or integration into flexible/ultrathin device architectures.

flexible electronics (research)2D semiconductor devicesoptoelectronic applicationsquantum computing platformshigh-mobility transistors (experimental)photonic integrated circuits (emerging)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	39.49	GPa	—
Shear Modulus(G)	29.03	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.06630	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.383	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hf1 Se2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control