Hf1 S2

semiconductor
· Hf1 S2

Hf1S2 is a layered transition metal dichalcogenide semiconductor compound combining hafnium and sulfur, belonging to the family of 2D materials under active research for next-generation electronics. This material exhibits the characteristic layered crystal structure of dichalcogenides, making it of significant interest for applications requiring atomically-thin semiconducting layers with tunable electronic properties. While primarily in the research and development phase, HfS2 and related hafnium chalcogenides are being explored as alternatives to more established 2D semiconductors due to their potential for high carrier mobility, direct bandgap character, and integration into flexible and wearable device architectures.

2D semiconductor researchTransistor devicesOptoelectronic applicationsFlexible electronicsVan der Waals heterostructuresNext-generation computing

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Bulk Modulus(K)
—
Pa——
Shear Modulus(G)
—
Pa——
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Band Gap(Eg)
—
eV——
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
—
eV/atom——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.