Hf1 Pb1 O3

semiconductor

· Hf1 Pb1 O3

HfPbO₃ is a mixed-metal oxide semiconductor compound combining hafnium and lead oxides, belonging to the perovskite or perovskite-related ceramic family. This is primarily a research material under investigation for electronic and photonic applications rather than an established commercial product. The hafnium-lead oxide system is of interest for potential ferroelectric, dielectric, or photocatalytic properties, with researchers exploring its use in advanced device architectures where the combination of hafnium's high-κ dielectric characteristics and lead's ferroelectric tendencies may offer unique functionality.

ferroelectric memory devices (experimental)high-κ dielectrics researchphotocatalytic applications (development stage)thin-film electronicsmaterials science researchoxide semiconductor research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	174.5	GPa	—
Shear Modulus(G)	94.40	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.539	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.762	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hf1 Pb1 O3

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control