Hf1 In1 Ni2
semiconductorHf₁In₁Ni₂ is an intermetallic compound combining hafnium, indium, and nickel in a fixed stoichiometric ratio, belonging to the broader class of ternary metallic intermetallics. This material is primarily of research interest for investigating phase stability, electronic structure, and mechanical properties in the Hf-In-Ni system, with potential applications in high-temperature structural materials or functional electronic devices. The incorporation of hafnium—a refractory metal with excellent high-temperature strength—combined with the electronic properties of indium and nickel, positions this compound as a candidate for exploratory work in aerospace, thermal barrier, or semiconductor-related research contexts, though industrial adoption remains limited pending further characterization.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |