H8 O4 I4 Ba2

semiconductor

· H8 O4 I4 Ba2

Ba₂I₄O₄H₈ is an experimental iodide-oxide hydroxide compound containing barium, representing an emerging class of mixed-anion semiconductors with potential optoelectronic functionality. This material family is primarily of research interest for photovoltaic and photoelectrochemical applications, where the combination of iodide and oxide/hydroxide ligands can influence band gap engineering and charge transport. The compound's semiconductor behavior and structural properties position it as a candidate for next-generation solar cells or light-emitting devices, though it remains in early-stage development with limited industrial adoption.

perovskite researchphotovoltaic prototypingoptoelectronic devicesband gap engineeringhalide semiconductor researchmaterials discovery

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	25.77	GPa	—
Shear Modulus(G)	12.90	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.988	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.329	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

H8 O4 I4 Ba2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control