H8 N3 O6

semiconductor

· H8 N3 O6

H8N3O6 is an experimental organic-inorganic hybrid semiconductor compound containing hydrogen, nitrogen, and oxygen elements. While not yet commercialized, this material belongs to the research family of nitrogen-oxygen coordination compounds and hybrid perovskites, which are being investigated for next-generation optoelectronic and energy applications. The material's moderate elastic properties and semiconductor classification suggest potential in thin-film device applications where tunable bandgap and solution processability could offer advantages over traditional inorganic semiconductors.

research photovoltaicsexperimental optoelectronicsthin-film deviceshybrid perovskite familyenergy conversion researchnovel semiconductor development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	26.90	GPa	—
Shear Modulus(G)	11.12	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.234	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.2820	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

H8 N3 O6

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control