H8N2O8I2 is an iodine-containing organic semiconductor compound combining hydrogen, nitrogen, oxygen, and iodine elements. This appears to be a research-phase material likely explored for optoelectronic or photovoltaic applications, where iodine substitution can modulate electronic bandgap and charge transport properties. The material family is of interest in perovskite and halide semiconductor research, where iodide incorporation is used to tune light absorption and carrier dynamics for next-generation photonic devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.439 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3770 | eV/atom | — |