H6 Al1 K3

semiconductor

· H6 Al1 K3

H6 Al1 K3 is an experimental semiconductor compound combining aluminum and potassium in a hydrogen-rich matrix, representing research into alternative semiconductor materials beyond conventional silicon and III-V compounds. This material family is primarily of academic and developmental interest, with potential applications in next-generation optoelectronics or energy conversion devices where lightweight, high-mobility semiconductors could offer advantages over traditional options. The specific H-Al-K composition is not yet established in mainstream commercial production, making it relevant primarily to materials researchers and device developers exploring novel band-gap engineering or quantum property tailoring.

experimental semiconductorsoptoelectronic researchmaterials developmenthydrogen-containing compoundsnext-generation devicesband-gap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	23.07	GPa	—
Shear Modulus(G)	12.96	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.112	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.2710	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

H6 Al1 K3

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control