H4CSN2 is a ceramic compound belonging to the carbosilane nitride family, likely a carbon-silicon-nitrogen composite or derivative phase. This material represents research-stage ceramics focused on high-temperature structural applications, where combined carbon and nitrogen bonding offers potential for enhanced thermal stability and oxidation resistance compared to conventional silicon nitride or silicon carbide.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 1.528 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.232 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 4.696 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.1909 | C/m² | — | ||
Seebeck Coefficient(S) | -208.3 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2009 | eV/atom | — |