H2Zr1 is a zirconium-based hydride semiconductor material, representing a research-phase intermetallic compound in the zirconium hydride family. This material is primarily of interest in advanced materials research for applications requiring high hardness combined with semiconducting behavior, though industrial adoption remains limited compared to mature zirconium alloys. Engineers exploring this material would typically be investigating hydrogen-storage systems, high-temperature electronic applications, or specialized ceramic-metal hybrid structures where zirconium's thermal stability and hydride phases offer potential advantages over conventional semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 133.0 | GPa | — | ||
Shear Modulus(G) | 19.95 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.07270 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5850 | eV/atom | — |