H2 Tm1 is a semiconductor material based on thulium (Tm) hydride chemistry, likely part of the rare-earth hydride family being explored for advanced electronic and photonic applications. This material belongs to an active research area where hydrogen-doped rare-earth compounds are investigated for their potential to enable next-generation devices with tunable electronic properties. While primarily in the development stage rather than mainstream industrial production, H2 Tm1 represents the type of rare-earth functional material that could address emerging needs in high-performance electronics where conventional semiconductors reach performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 92.50 | GPa | — | ||
Shear Modulus(G) | 60.66 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02050 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7420 | eV/atom | — |