GeZrO2S

semiconductor

· GeZrO2S

GeZrO₂S is an experimental quaternary semiconductor compound combining germanium, zirconium, oxygen, and sulfur elements. This material belongs to the mixed-anion semiconductor family and is primarily investigated in research settings for wide-bandgap and photocatalytic applications rather than established commercial production. Its potential lies in photocatalysis, optoelectronics, and environmental remediation where the combination of transition metal oxides with sulfide components may offer tunable electronic properties and enhanced light absorption compared to binary oxide or sulfide semiconductors.

photocatalysis researchwide-bandgap semiconductorsenvironmental remediationthin-film optoelectronicswater splitting (experimental)UV/visible light absorption

Compliance & Regulations

?EAR?ISO 10993?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.500	eV	—
Magnetic Moment(μB)	-0.000186	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.6000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

Safety & Biocompatibility

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GeZrO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control

Safety & Biocompatibility