GeZnO₂S is a quaternary semiconductor ceramic compound combining germanium, zinc, oxygen, and sulfur elements. This material belongs to the family of mixed-anion semiconductors and remains primarily in the research and development phase, with potential applications in photovoltaic and optoelectronic device development. It is noteworthy as an exploratory compound for wide-bandgap semiconductor engineering where the combination of cation and anion chemistry enables tuning of electronic and optical properties beyond conventional binary or ternary alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 1.948 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.260 | eV/atom | — |