GeThO3 — Properties & Data | MatWorld

GeThO3

semiconductor

· GeThO3

GeThO₃ is an experimental mixed-metal oxide semiconductor combining germanium and thorium constituents, representing a compound from the family of complex oxide systems under investigation for advanced electronic and photonic applications. This material remains primarily in research phase, with potential interest in high-temperature semiconducting applications, radiation-resistant electronics, and emerging photovoltaic or optoelectronic devices where the combination of heavy-metal oxides offers unique electronic band structure properties. The thorium-containing composition restricts civilian applications and requires specialized handling protocols, limiting its practical adoption compared to conventional semiconductors.

Research semiconductorsHigh-temperature electronicsRadiation-resistant devicesExperimental photonicsNuclear environmentsAdvanced materials development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3230	eV	DFT · PBE
Magnetic Moment(μB)	0.000	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.162	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GeThO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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