GeTaO2N

semiconductor

· GeTaO2N

GeTaO₂N is an experimental oxynitride semiconductor compound combining germanium, tantalum, oxygen, and nitrogen. This material belongs to the family of transition metal oxynitrides, which are of significant research interest for visible-light photocatalysis and optoelectronic applications due to their tunable bandgap and enhanced light absorption compared to conventional oxides. While not yet in widespread commercial production, oxynitride semiconductors like this are being investigated as alternatives to titanium dioxide and other wide-bandgap materials for environmental remediation, water splitting, and next-generation photovoltaic devices.

Photocatalytic water treatmentHydrogen generation/water splittingVisible-light photocatalysisResearch semiconductor devicesOptoelectronic thin filmsEnvironmental remediation catalysts

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.800	eV	—
Magnetic Moment(μB)	-0.000146	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.2400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GeTaO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control