GeSnOFN — Properties & Data | MatWorld

GeSnOFN

semiconductor

· GeSnOFN

GeSnOFN is an experimental quaternary semiconductor compound combining germanium, tin, oxygen, and fluorine elements, representing an emerging material in the broader family of group IV and mixed-halide semiconductors. This composition is primarily of research interest for next-generation optoelectronic and photonic applications, where tunable bandgap and enhanced carrier mobility are sought; it remains largely in the laboratory phase with potential advantages over conventional Si and GaAs in specific niche applications requiring fluorine doping or tin-germanium engineering.

Experimental photonics researchTunable bandgap semiconductorsNext-generation infrared detectorsFluorine-doped device engineeringThin-film optoelectronics (developmental)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	-2.126e-16	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.8600	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GeSnOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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