GeSe

GeSe is a layered IV–VI semiconductor compound composed of germanium and selenium, belonging to the post-transition metal chalcogenide family. It exists as a 2D material with strong in-plane bonding and weak interlayer van der Waals interactions, making it exfoliable into few-layer or monolayer forms. While primarily a research material rather than a mature commercial product, GeSe shows promise in optoelectronic and energy applications due to its direct bandgap, strong light absorption, and intrinsic anisotropy—properties that distinguish it from more common semiconductors like silicon or gallium arsenide.