GeSbTe3 is a chalcogenide compound belonging to the germanium-antimony-tellurium (GST) family, a class of phase-change materials studied primarily in research and advanced technology development. This material is investigated for its ability to reversibly switch between crystalline and amorphous states when exposed to heat or electrical pulses, making it a candidate for next-generation non-volatile memory and data storage applications. Compared to conventional storage media, GST compounds offer potential advantages in switching speed, endurance, and scalability, though commercial deployment remains limited to specialized memory devices and experimental prototypes.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.192 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.02350 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.08608 | eV/atom | — |