GeSbTe is a chalcogenide ceramic compound belonging to the germanium-antimony-tellurium family, primarily studied as a phase-change material for data storage and memory applications. The material is notable for its ability to rapidly switch between crystalline and amorphous states when heated, making it central to rewritable optical media (DVDs, Blu-rays) and next-generation phase-change memory (PCM) devices. Engineers select GeSbTe over competing memory technologies for its fast switching speed, good thermal stability, and compatibility with existing manufacturing processes, though it continues to be refined for improved endurance and data retention in advanced memory architectures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | -1.290 | GPa | — | ||
Poisson's Ratio(ν) | 0.1200 | - | — | ||
Shear Modulus(G) | -2.830 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 2.784 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.142 | eV/atom | — | ||
Formation Energy(ΔHf) | 1.067 | eV/atom | — |