GeSb is a binary intermetallic ceramic compound composed of germanium and antimony, belonging to the family of IV-V semiconducting materials. It is primarily investigated in research contexts for phase-change memory applications and thermoelectric devices, where its ability to reversibly switch between crystalline and amorphous states offers potential advantages over conventional materials. The material is notable for its thermal stability and electrical switching properties, making it of interest to researchers developing next-generation non-volatile memory and waste-heat recovery technologies, though industrial adoption remains limited compared to established alternatives like GeTe or Sb-based alloys.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 58.48 | GPa | — | ||
Poisson's Ratio(ν) | 0.3200 | - | — | ||
Shear Modulus(G) | 29.23 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.459 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1425 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.1425 | eV/atom | — |