GeS — Properties & Data | MatWorld

GeS

Name: GeS
Brand: MatWorld

semiconductor

· GeS

Germanium sulfide (GeS) is a layered IV-VI semiconductor compound with a two-dimensional crystal structure similar to black phosphorus, offering tunable bandgap and strong anisotropic optical properties. Primarily of research and emerging-technology interest, GeS is being investigated for applications requiring efficient light absorption and conversion, particularly in flexible and wearable optoelectronic devices where its mechanical flexibility and layer-dependent functionality provide advantages over conventional bulk semiconductors. The material's low exfoliation energy and tunable electronic properties make it a candidate for next-generation photovoltaics, photodetectors, and integrated photonics, though it remains largely in laboratory development rather than established industrial production.

thin-film photovoltaicsphotodetectorsflexible optoelectronicsresearch phase materialstwo-dimensional semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions
Bulk Modulus(K)2 entries	21.52	GPa	DFT
↳	39.96	GPa	DFT · OptB88vdW
Exfoliation Energy(Eexf)	132.3	meV/atom	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2400	-	DFT · OptB88vdW
Shear Modulus(G)2 entries	17.33	GPa	DFT
↳	31.59	GPa	DFT · OptB88vdW

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	4.017	kg/m³	DFT · OptB88vdW

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	1.800	eV	Measured
↳	1.320	eV	DFT · OptB88vdW
Dielectric Constant (Relative Permittivity)(εr)	25.08	-	DFT · OptB88vdW
High-Frequency Dielectric Constant (ε∞)(ε∞)	12.57	-	DFT · OptB88vdW
Electron Effective Mass(m*e)	0.9033	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	0.9833	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.000	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00569	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00249	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-264.8	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	311.8	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

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Method

Property	Value	Unit	Conditions
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)2 entries	-0.3595	eV/atom	DFT · OptB88vdW
↳	-0.3944	eV/atom	Measured

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GeS

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