Germanium nitride (GeN) is an inorganic ceramic compound combining germanium and nitrogen, belonging to the III-V nitride family of semiconducting ceramics. While primarily in the research and development phase rather than established in high-volume production, GeN is being investigated for optoelectronic and high-temperature semiconductor applications due to its wide bandgap properties and potential thermal stability. Engineers evaluating GeN should recognize it as an emerging material with theoretical advantages in power electronics and UV/visible light applications, though material processing and device integration remain active areas of academic and industrial research.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 105.0 | GPa | — | ||
Poisson's Ratio(ν) | 0.3700 | - | — | ||
Shear Modulus(G) | 22.71 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.497 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.4453 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.3664 | eV/atom | — |