GeKO3 is a germanium-based oxide semiconductor compound, likely a potassium germanate or related ternary oxide phase with potential for optoelectronic and photonic applications. As a research material, GeKO3 belongs to the family of wide-bandgap semiconductors being explored for UV/visible light emission, detection, and scintillation purposes where germanium compounds offer atomic number advantages over silicates. The material's primary appeal lies in combining germanium's high atomic number with oxide stability, making it relevant for radiation detection, high-energy physics instruments, and emerging photonic devices where conventional gallium nitride or silicon-based alternatives have limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.4060 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -1.601 | eV/atom | — | ||
| ↳ | 1.480 | eV/atom | — |