GeHfO2S

semiconductor

· GeHfO2S

GeHfO2S is an experimental quaternary semiconductor compound combining germanium, hafnium, oxygen, and sulfur elements. This material belongs to the emerging class of mixed-anion and mixed-cation semiconductors being investigated for next-generation optoelectronic and photovoltaic devices. Research into GeHfO2S and related compounds is driven by the potential to engineer bandgaps and electronic properties beyond what single-compound semiconductors offer, making it relevant for photocatalysis, light emission, and advanced solar cell architectures where conventional materials like Si or GaAs reach performance limits.

photovoltaic researchoptoelectronic devicesphotocatalysisnext-generation solar cellswide-bandgap semiconductorsmaterials research and development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.300	eV	—
Magnetic Moment(μB)	-0.000655	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.6600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GeHfO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control