GeHfO2N

ceramic

· GeHfO2N

GeHfO2N is an experimental oxynitride ceramic composed of germanium, hafnium, oxygen, and nitrogen phases. This material family is under investigation in materials research for next-generation semiconductor and high-temperature applications, leveraging hafnium oxide's thermal stability and the oxynitride chemistry to potentially improve mechanical or electronic properties compared to single-oxide alternatives.

advanced ceramics researchsemiconductor device layershigh-temperature structural applicationsgate dielectrics developmentthermal barrier coatings (exploratory)

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.9945	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GeHfO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental