GeGaN3 — Properties & Data | MatWorld

GeGaN3

ceramic

· GeGaN3

GeGaN3 is a wide-bandgap ceramic compound combining germanium, gallium, and nitrogen, belonging to the family of III-V nitride semiconductors and ceramic materials. This is primarily a research-phase material being investigated for high-temperature and high-power electronic applications, where its wide bandgap and potential thermal stability could offer advantages over conventional semiconductors in demanding environments.

High-temperature electronicsPower semiconductor devicesResearch/developmental applicationsWide-bandgap semiconductor researchThermal management in harsh environmentsNext-generation power conversion

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	3.997	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.920	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GeGaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental